NTMFD4902NFT1G
MOSFET 2N-CH 30V 10.3A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4902NFT1G is a dual N-channel MOSFET array designed for high-efficiency power management applications. This device features a 30V drain-source voltage rating and continuous drain currents of 10.3A and 13.3A at 25°C. Its low Rds(on) of 6.5mOhm at 10A and 10V, combined with logic-level gate drive capability, ensures minimized conduction losses. The MOSFET array is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) package, suitable for surface mounting. Key parameters include a maximum gate charge of 9.7nC at 4.5V and input capacitance of 1150pF at 15V. With a power dissipation of 1.1W and 1.16W, this component is utilized in automotive, industrial, and consumer electronics sectors requiring advanced power switching solutions. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual), Schottky |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W, 1.16W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A, 13.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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