NTMFD4901NFT1G
MOSFET 2N-CH 30V 10.3A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4901NFT1G is a dual N-channel MOSFET array featuring a 30V drain-source voltage rating. This component, packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) format, offers a continuous drain current capability of 10.3A and 17.9A per channel. Key electrical characteristics include a low on-resistance of 6.5mOhm at 10A and 10V, and a gate threshold voltage of 2.2V maximum at 250µA. The MOSFET technology is Metal Oxide, and the device includes a logic level gate feature. Input capacitance (Ciss) is specified at 1150pF maximum at 15V, with a gate charge (Qg) of 9.7nC maximum at 4.5V. Power dissipation is rated at 1.1W and 1.2W per channel. This component is suitable for applications within the automotive and industrial sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual), Schottky |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W, 1.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A, 17.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |