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NTMFD2D4N03P8

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NTMFD2D4N03P8

MOSFET 2N-CH 30V 17A/56A 8PQFN

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi NTMFD2D4N03P8 is a MOSFET array featuring two N-channel asymmetrical configurations within an 8-PQFN (5x6) package. This device offers a drain-source voltage (Vdss) of 30V. Continuous drain current handling at 25°C is specified at 17A (Ta) and 56A (Tc) for one channel, and 25A (Ta) and 84A (Tc) for the second, with corresponding power dissipation ratings of 1W (Ta) / 23W (Tc) and 1.1W (Ta) / 25W (Tc). On-resistance (Rds On) is rated at 5mOhm @ 17A, 10V and 2.4mOhm @ 25A, 10V, respectively. Gate charge (Qg) is 24nC and 55nC (Max) @ 10V, with input capacitance (Ciss) up to 1715pF and 3825pF (Max) @ 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management. The device is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1715pF @ 15V, 3825pF @ 15V
Rds On (Max) @ Id, Vgs5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V, 55nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id3V @ 250µA, 3V @ 1mA
Supplier Device Package8-PQFN (5x6)

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