NTMD6P02R2SG
MOSFET 2P-CH 20V 4.8A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD6P02R2SG is a dual P-channel MOSFET array designed for power management applications. This component offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C. Featuring logic level gate operation, it presents a maximum Rds(on) of 33mOhm at 6.2A and 4.5V. The device has a maximum power dissipation of 750mW and an input capacitance (Ciss) of 1700pF at 16V, with a gate charge (Qg) of 35nC at 4.5V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it operates within a temperature range of -55°C to 150°C. This MOSFET array is employed in various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 750mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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