NTMD6N04R2G
MOSFET 2N-CH 40V 4.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD6N04R2G is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 4.6A at 25°C. With a low Rds On of 34mOhm at 5.8A and 10V, it minimizes conduction losses. The logic level gate enhancement simplifies driving circuitry. The NTMD6N04R2G is housed in an 8-SOIC package for surface mounting, offering a power dissipation of 1.29W. Typical applications include power management, motor control, and general-purpose switching in automotive and industrial sectors. Key parameters include a Gate Charge (Qg) of 30nC (max) @ 10V and an Input Capacitance (Ciss) of 900pF (max) @ 32V. It operates within an ambient temperature range of -55°C to 150°C. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.29W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 32V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |