NTMD6N03R2
MOSFET 2N-CH 30V 6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMD6N03R2 is a dual N-channel MOSFET array designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 6A at 25°C. The MOSFET array offers a low Rds(On) of 32mOhm maximum at 6A and 10V Vgs, with a Logic Level Gate feature for enhanced compatibility.
The NTMD6N03R2 is housed in an 8-SOIC package, with a surface mount mounting type. Key electrical characteristics include a Gate Charge (Qg) of 30nC maximum at 10V and an Input Capacitance (Ciss) of 950pF maximum at 24V. The maximum power dissipation is rated at 1.29W. This component operates across a temperature range of -55°C to 150°C (TJ). The device is supplied in a Tape & Reel (TR) package. Applications include power management, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.29W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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