NTMD6N02R2
MOSFET 2N-CH 20V 3.92A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMD6N02R2 2 N-Channel MOSFET array in an 8-SOIC package. This device offers a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.92A at 25°C. Featuring a logic-level gate, the NTMD6N02R2 exhibits a maximum Rds(on) of 35mOhm at 6A and 4.5V, with a Gate Charge (Qg) of 20nC at 4.5V. Input capacitance (Ciss) is rated at 1100pF maximum at 16V. The component is rated for a maximum power dissipation of 730mW and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial sectors. Packaging is supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 730mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.92A |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 16V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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