NTMD5838NLR2G
MOSFET 2N-CH 40V 7.4A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD5838NLR2G is a 40V dual N-channel MOSFET array housed in an 8-SOIC package. This surface-mount component offers a continuous drain current (Id) of 7.4A at 25°C and a maximum power dissipation of 2.1W. Key electrical characteristics include a Vgs(th) of 3V at 250µA, a maximum Rds(On) of 25mOhm at 7A and 10V, and a logic-level gate feature. Input capacitance (Ciss) is specified at a maximum of 785pF at 20V, with a gate charge (Qg) of 17nC at 10V. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial power management systems. The NTMD5838NLR2G is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 20V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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