NTMD5836NLR2G
MOSFET 2N-CH 40V 9A/5.7A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMD5836NLR2G is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 40V Drain-to-Source Voltage (Vdss) and supports continuous drain currents of 9A and 5.7A at 25°C. The MOSFET array is built with logic-level gate technology, offering improved drive characteristics. Key electrical parameters include a maximum Rds(On) of 12mOhm at 10A and 10V, and a gate charge (Qg) of 50nC at 10V. The device has an input capacitance (Ciss) of 2120pF maximum at 20V. This surface mount component is housed in an 8-SOIC package and operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 1.5W. The NTMD5836NLR2G is commonly utilized in automotive and industrial power management solutions. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 2120pF @ 20V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |