NTMD3N08LR2
MOSFET 2N-CH 80V 2.3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMD3N08LR2 is a dual N-channel MOSFET array packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration. This device offers a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain current (Id) of 2.3A at 25°C. The MOSFET features a logic-level gate for enhanced drive flexibility. With an Rds(On) of 215mOhm maximum at 2.5A and 10V, it is suitable for power management applications. The device dissipates a maximum power of 3.1W. Key electrical parameters include a Gate Charge (Qg) of 15nC maximum at 10V and an Input Capacitance (Ciss) of 480pF maximum at 25V. The typical threshold voltage (Vgs(th)) is 3V maximum at 250µA. This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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