NTMD2P01R2G
MOSFET 2P-CH 16V 2.3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD2P01R2G is a dual P-channel MOSFET array designed for efficient power management. This component features a continuous drain current (Id) of 2.3A and a drain-source voltage (Vdss) of 16V. Engineered with logic-level gate functionality, it offers a maximum on-resistance (Rds On) of 100mOhm at 2.4A and 4.5V. The NTMD2P01R2G boasts a low gate charge (Qg) of 18nC at 4.5V and an input capacitance (Ciss) of 750pF at 16V. Packaged in an 8-SOIC (0.154" width) format and supplied on tape and reel, this surface-mount device operates within a temperature range of -55°C to 150°C (TJ). Its maximum power dissipation is 710mW. This MOSFET array is commonly utilized in consumer electronics and industrial applications requiring compact power switching solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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