NTMD2P01R2
MOSFET 2P-CH 16V 2.3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD2P01R2 is a dual P-channel MOSFET array packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, supplied on Tape & Reel (TR). This device offers a Drain to Source Voltage (Vdss) of 16V and a continuous Drain Current (Id) of 2.3A at 25°C. Key parameters include a maximum power dissipation of 710mW, a low Rds On of 100mOhm at 2.4A and 4.5V, and a Gate Charge (Qg) of 18nC at 4.5V. Featuring logic level gate operation, this MOSFET array is suitable for applications requiring efficient power switching in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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