NTMD2C02R2SG
MOSFET N/P-CH 20V 5.2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD2C02R2SG is a MOSFET array featuring both N-channel and P-channel transistors in a single 8-SOIC package. This device is rated for a drain-source voltage (Vdss) of 20V, with continuous drain currents of 5.2A for the N-channel and 3.4A for the P-channel at 25°C. It offers a low Rds On of 43mOhm maximum at 4A and 4.5V Vgs, and a logic level gate for enhanced drive flexibility. Key parameters include a maximum gate charge (Qg) of 20nC at 4.5V Vgs and input capacitance (Ciss) of 1100pF maximum at 10V Vds. The component is supplied in Tape & Reel packaging and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management and general-purpose switching across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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