NTMD2C02R2
MOSFET N/P-CH 20V 5.2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMD2C02R2 is a MOSFET array featuring complementary N-channel and P-channel configurations. This component is designed for 20V drain-source voltage with continuous drain currents of 5.2A for the N-channel and 3.4A for the P-channel, respectively, at 25°C. The device boasts a low Rds On of 43mOhm at 4A and 4.5V Vgs, and a logic level gate for enhanced drive efficiency. With a maximum power dissipation of 2W and a gate charge of 20nC, it is suitable for applications requiring efficient switching and power management. The NTMD2C02R2 is housed in an 8-SOIC package and is supplied on tape and reel. Typical applications include power management, battery charging circuits, and portable electronics.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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