NTMC1300R2
MOSFET N/P-CH 30V 2.2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMC1300R2 is a complementary N-channel and P-channel MOSFET array designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 2.2A for the N-channel and 1.8A for the P-channel. Optimized for switching efficiency, it offers a low Rds(on) of 90mOhm at 3A, 10V. The logic-level gate ensures compatibility with a wider range of control signals. Housed in an 8-SOIC package, this surface-mount component is suitable for power management, battery protection, and general-purpose switching within automotive, industrial, and consumer electronics sectors. The NTMC1300R2 operates across a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A, 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 20V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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