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NTLUD4C26NTAG

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NTLUD4C26NTAG

MOSFET 2N-CH 30V 9.1A 6UDFN

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi NTLUD4C26NTAG is a dual N-channel MOSFET array from the µCool™ series. This component features a 30V drain-source breakdown voltage and a continuous drain current of 9.1A at 25°C ambient. With a low on-resistance of 21mOhm at 6A and 10V, this MOSFET array is designed for efficient power switching applications. The device is housed in a compact 6-UDFN (2x2) package with an exposed pad for enhanced thermal performance, supporting a maximum power dissipation of 2.63W. Key electrical characteristics include an input capacitance of 460pF at 15V and a gate charge of 9nC at 4.5V. This surface-mount component operates across a wide temperature range of -55°C to 150°C. It finds application in power management solutions within the automotive and industrial sectors.

Additional Information

Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.63W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds460pF @ 15V
Rds On (Max) @ Id, Vgs21mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package6-UDFN (2x2)
Grade-
Qualification-

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