NTLUD3A50PZTBG
MOSFET 2P-CH 20V 2.8A 6UDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLUD3A50PZTBG is a dual P-channel MOSFET array designed for power management applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.8A at 25°C. With a maximum on-resistance (Rds On) of 50mOhm at 4A and 4.5V, it offers efficient switching. The NTLUD3A50PZTBG utilizes a logic level gate for compatibility with lower voltage control signals. Fabricated with MOSFET technology, it is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 10.4nC (max) at 4.5V and an input capacitance (Ciss) of 920pF (max) at 15V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 500mW. This MOSFET array is commonly employed in automotive and industrial electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
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