NTLUD3A50PZTAG
MOSFET 2P-CH 20V 2.8A 6UDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLUD3A50PZTAG is a dual P-channel MOSFET array designed for efficient power management applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.8A at 25°C. The NTLUD3A50PZTAG offers a low Rds(on) of 50mOhm at 4A and 4.5V Vgs, contributing to reduced conduction losses. It is constructed using MOSFET technology and includes logic-level gate drive capability. The device is supplied in a compact 6-UDFN (2x2) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 10.4nC at 4.5V and an input capacitance of 920pF at 15V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
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