NTLUD3A260PZTBG
MOSFET 2P-CH 20V 1.3A 6UDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLUD3A260PZTBG is a 2 P-channel MOSFET array designed for space-constrained applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 1.3A per channel at 25°C. With a low on-resistance of 200mOhm maximum at 2A and 4.5V Vgs, it minimizes conduction losses. The logic-level gate ensures compatibility with lower voltage microcontrollers. The device is housed in a compact 6-UDFN (1.6x1.6) package, utilizing a surface mount configuration. Key electrical parameters include a maximum gate charge of 4.2nC at 4.5V Vgs and an input capacitance of 300pF maximum at 10V Vds. This MOSFET array is suitable for use in consumer electronics, portable devices, and power management circuits. It operates within an extended temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
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