NTLUD3A260PZTAG
MOSFET 2P-CH 20V 1.3A 6UDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLUD3A260PZTAG is a 2 P-Channel MOSFET array designed for high-density applications. This device features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 1.3A at 25°C. With a low Rds(On) of 200mOhm at 2A and 4.5V Vgs, it offers efficient power switching. The logic level gate feature simplifies driving requirements. Packaged in a compact 6-UDFN (1.6x1.6) with an exposed pad, it is suitable for surface mount applications. Key parameters include a maximum power dissipation of 500mW, a Gate Charge (Qg) of 4.2nC at 4.5V, and an input capacitance (Ciss) of 300pF at 10V. This component is utilized in industries such as consumer electronics and mobile devices. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
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