NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTLTD7900ZR2G is a dual N-channel MOSFET array designed for demanding applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The NTLTD7900ZR2G offers a low Rds(On) of 26mOhm at 6.5A and 4.5V, coupled with a logic-level gate for enhanced drive flexibility. With a maximum power dissipation of 1.5W and an operating temperature range of -55°C to 150°C, it is suitable for automotive and industrial control systems. The 8-DFN (3x3) exposed pad package provides excellent thermal performance for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 18nC at 4.5V and an input capacitance (Ciss) of 15pF at 16V. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 16V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-DFN (3x3), (MICRO8 LEADLESS) |
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