NTLLD4951NFTWG
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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This onsemi MOSFET array, part number NTLLD4951NFTWG, features two N-channel transistors in an asymmetrical configuration. With a Drain-to-Source Voltage (Vdss) of 30V and continuous drain currents of 5.5A and 6.3A respectively, this device is suitable for power management applications. The low on-resistance of 17.4mOhm at 9A and 10V, coupled with a maximum power dissipation of 800mW and 810mW, makes it efficient for space-constrained designs. It is supplied in an 8-WDFN (3x3) surface mount package, utilizing MOSFET technology. This component is commonly found in automotive and industrial power control systems. Key electrical parameters include a typical Gate Charge (Qg) of 12nC and Input Capacitance (Ciss) of 605pF. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW, 810mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A, 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3x3) |
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