NTLLD4901NFTWG
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLLD4901NFTWG is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and offers continuous drain currents of 5.5A and 6.3A at 25°C. With a logic level gate, it ensures compatibility with lower gate drive voltages. The device exhibits a low on-resistance (Rds On) of 17.4mOhm at 9A and 10V, minimizing conduction losses. Packaged in an 8-WDFN (3x3) with an exposed pad for enhanced thermal performance, it supports a maximum power dissipation of 800mW and 810mW. Key electrical parameters include a gate charge (Qg) of 12nC (max) at 10V and input capacitance (Ciss) of 605pF (max) at 15V. Operating temperature ranges from -55°C to 150°C. This MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW, 810mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A, 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3x3) |
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