NTLJD4150PTBG
MOSFET 2P-CH 30V 1.8A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLJD4150PTBG is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and supports a continuous drain current (Id) of 1.8A at 25°C. With a low on-resistance (Rds On) of 135mOhm at 4A and 10V, it minimizes conduction losses. The logic-level gate feature enhances compatibility with lower voltage control signals. Manufactured using advanced MOSFET technology, this device offers a maximum power dissipation of 700mW and is packaged in a compact 6-WDFN (2x2) surface-mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 4.5nC at 4.5V and input capacitance (Ciss) of 300pF at 15V. The NTLJD4150PTBG is suitable for use in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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