NTLJD3183CZTBG
MOSFET N/P-CH 20V 2.6A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLJD3183CZTBG is a MOSFET array featuring both N-channel and P-channel configurations. This component offers a 20V Drain-to-Source voltage (Vdss) with a continuous drain current of 2.6A for the N-channel and 2.2A for the P-channel, both specified at 25°C. It utilizes MOSFET technology with a logic level gate feature, indicated by a Vgs(th) of 1V at 250µA. Key electrical parameters include a maximum Rds On of 68mOhm at 2A, 4.5V, and a maximum gate charge (Qg) of 7nC at 4.5V. Input capacitance (Ciss) is a maximum of 355pF at 10V. This device is housed in a 6-WDFN (2x2) surface mount package with an exposed pad, provided on a Tape & Reel (TR). It operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 710mW. The NTLJD3183CZTBG is commonly found in applications such as power management and battery charging circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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