NTLJD3183CZTAG
MOSFET N/P-CH 20V 2.6A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi NTLJD3183CZTAG is a MOSFET array featuring both N-channel and P-channel devices. This component offers a drain-source voltage (Vdss) of 20V, with continuous drain currents of 2.6A for the N-channel and 2.2A for the P-channel, both specified at 25°C. The array is housed in a compact 6-WDFN (2x2) package with an exposed pad and is supplied on tape and reel. Key electrical characteristics include a typical Rds(On) of 68mOhms at 2A and 4.5V, a logic level gate for enhanced driving flexibility, and a maximum power dissipation of 710mW. The device operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET array finds application in power management solutions, battery charging circuits, and general-purpose switching within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
