NTLJD3181PZTBG
MOSFET 2P-CH 20V 2.2A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLJD3181PZTBG is a dual P-channel MOSFET array designed for high-density applications. This component features a Vds of 20V and a continuous drain current (Id) of 2.2A per channel at 25°C. With a low Rds(On) of 100mOhm maximum at 2A and 4.5V Vgs, it minimizes conduction losses. The device operates with a logic level gate input, accepting a Vgs(th) of 1V maximum at 250µA, and exhibits a gate charge (Qg) of 7.8nC at 4.5V. Input capacitance (Ciss) is rated at 450pF maximum at 10V. The NTLJD3181PZTBG is housed in a compact 6-WDFN (2x2) exposed pad package, suitable for surface mounting. It offers a maximum power dissipation of 710mW and operates within an extended temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power management solutions and general switching applications across various electronics industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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