NTLJD3119CTAG
MOSFET N/P-CH 20V 2.6A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTLJD3119CTAG is a complementary N-channel and P-channel MOSFET array from the µCool™ series. This device features a 20V drain-to-source breakdown voltage and continuous drain currents of 2.6A for the N-channel and 2.3A for the P-channel. Optimized for high-density power management, it exhibits a low on-resistance of 65mOhm at 3.8A and 4.5V Vgs. The NTLJD3119CTAG incorporates a logic-level gate for compatibility with lower voltage controllers and a maximum power dissipation of 710mW. Key electrical characteristics include a gate charge of 3.7nC at 4.5V and input capacitance of 271pF at 10V. The component is supplied in a compact 6-WDFN (2x2) exposed pad package suitable for surface mounting, with a tape and reel packaging option. This MOSFET array is utilized in applications such as battery management, power switching, and portable electronics.
Additional Information
Series: µCool™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 271pF @ 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Grade | - |
| Qualification | - |
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