NTLJD3115PTAG
MOSFET 2P-CH 20V 2.3A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLJD3115PTAG is a 2 P-Channel MOSFET array designed for high-density power switching applications. Featuring a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.3A at 25°C, this device offers a low on-resistance of 100mOhm maximum at 2A, 4.5V. The logic level gate simplifies drive requirements, and the device exhibits a gate charge of 6.2nC at 4.5V. Packaged in a compact 6-WDFN (2x2) with an exposed pad for enhanced thermal performance, the NTLJD3115PTAG is suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Its 710mW maximum power dissipation makes it ideal for portable electronics, battery management, and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 710mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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