NTLJD2105LTBG
MOSFET N/P-CH 8V 2.5A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTLJD2105LTBG is a MOSFET array featuring both N-channel and P-channel transistors within a compact 6-WDFN (2x2) exposed pad package. This device operates at a Drain to Source Voltage (Vdss) of 8V and supports a continuous drain current (Id) of 2.5A at 25°C. With a low Rds On of 50mOhm at 4A and 4.5V, it is suitable for efficient power switching applications. The MOSFET array is designed for surface mounting and can operate across a wide temperature range of -55°C to 150°C (TJ). Its low power dissipation of 520mW and Gate Threshold Voltage (Vgs(th)) of 1V at 250µA make it a robust component for various electronics, including portable devices and automotive systems. The NTLJD2105LTBG is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 520mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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