NTLJD2104PTAG
MOSFET 2P-CH 12V 2.4A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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This onsemi NTLJD2104PTAG is a dual P-channel MOSFET array designed for demanding applications. It features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.4A at 25°C. The device offers low on-resistance (Rds On) of 90mOhm maximum at 3A and 4.5V Vgs, along with a logic level gate for enhanced compatibility. With a maximum power dissipation of 700mW and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power management and switching circuits across various industries, including automotive and industrial automation. The 6-WDFN (2x2) exposed pad package ensures efficient thermal performance. Key parameters include a gate charge (Qg) of 8nC maximum at 4.5V and input capacitance (Ciss) of 467pF maximum at 6V. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 467pF @ 6V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
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