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NTJD4401NT4G

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NTJD4401NT4G

MOSFET 2N-CH 20V 0.63A SC88

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi NTJD4401NT4G is a dual N-channel MOSFET array in a 6-TSSOP, SC-88, SOT-363 package. This device offers a Drain to Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 630mA at 25°C. Featuring a logic level gate, its Rds On is specified at a maximum of 375mOhm at 630mA and 4.5V Vgs, with a Power Dissipation (Pd) of 270mW. The Gate Charge (Qg) is a maximum of 3nC at 4.5V Vgs, and the Input Capacitance (Ciss) is 46pF maximum at 20V Vds. This component is suitable for applications in consumer electronics and industrial automation. It operates within an industrial temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max270mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C630mA
Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
Rds On (Max) @ Id, Vgs375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88/SC70-6/SOT-363

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