NTJD4401NT1
MOSFET 2N-CH 20V 0.63A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTJD4401NT1 is a dual N-channel MOSFET array designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 630mA at 25°C. With a maximum on-resistance (Rds On) of 375mOhm at 630mA and 4.5V, and a low gate charge (Qg) of 3nC at 4.5V, it facilitates rapid switching. The logic-level gate feature enhances compatibility with lower voltage control signals. Packaged in a 6-TSSOP, SC-88, SOT-363 (SC-88/SC70-6/SOT-363) and supplied on tape and reel, the NTJD4401NT1 is suitable for surface mounting. Its 270mW power dissipation rating and operating temperature range of -55°C to 150°C make it applicable in portable electronics, consumer devices, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 630mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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