NTJD4152PT1
MOSFET 2P-CH 20V 0.88A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTJD4152PT1 is a dual P-Channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 880mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 260mOhm at 880mA and 4.5V gate-source voltage (Vgs), indicating low conduction losses. With a logic level gate feature, it is suitable for direct interface with low-voltage control signals. The NTJD4152PT1 is housed in a compact SC-88/SC70-6/SOT-363 package, facilitating dense board layouts. Typical applications include battery management, load switching, and power control in portable electronics and automotive systems. Key electrical characteristics include a gate charge (Qg) of 2.2nC (max) at 4.5V and input capacitance (Ciss) of 155pF (max) at 20V. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 272mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 880mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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