NTJD3158CT2G
MOSFET N/P-CH 20V 0.63A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTJD3158CT2G is a MOSFET array featuring both N-channel and P-channel configurations within a single SC-88/SC70-6/SOT-363 package. This device offers a Drain to Source Voltage (Vdss) of 20V. The N-channel MOSFET provides a continuous drain current (Id) of 630mA, with a maximum On-Resistance (Rds On) of 375mOhm at 630mA and 4.5V Vgs. The P-channel MOSFET supports a continuous drain current of 820mA, also with an Rds On of 375mOhm at 820mA and 4.5V Vgs. This array is designed with a logic level gate, a maximum power dissipation of 270mW, and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a maximum Gate Charge (Qg) of 3nC at 4.5V and an input capacitance (Ciss) of 46pF at 20V. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistors. This component is suitable for applications in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA, 820mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 630mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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