NTJD3158CT1G
MOSFET N/P-CH 20V 0.63A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTJD3158CT1G is a MOSFET array featuring complementary N-channel and P-channel devices. This component is designed for surface mounting in the compact SC-88/SC70-6/SOT-363 package. It offers a drain-source voltage (Vdss) of 20V and continuous drain currents of 630mA for the N-channel and 820mA for the P-channel at 25°C, with a maximum power dissipation of 270mW. The device exhibits a low Rds On of 375mOhm at 630mA and 4.5V for the N-channel, and features a logic-level gate for enhanced compatibility with lower voltage control signals. Key parameters include a maximum gate charge (Qg) of 3nC at 4.5V and input capacitance (Ciss) of 46pF at 20V. This MOSFET array finds application in power management and switching circuits across various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA, 820mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 630mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |