NTJD2152PT1G
MOSFET 2P-CH 8V 0.775A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTJD2152PT1G is a dual P-channel MOSFET array designed for robust performance in demanding applications. This device features a Drain-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 775mA at 25°C, with a low On-Resistance (Rds On) of 300mOhm at 570mA and 4.5V Vgs. The logic-level gate functionality simplifies driver requirements. With a maximum power dissipation of 270mW and an operating temperature range of -55°C to 150°C, the NTJD2152PT1G is suitable for portable electronics and power management circuits. Housed in a compact 6-TSSOP, SC-88, SOT-363 package, it is supplied on tape and reel for automated assembly. Key parameters include a Gate Charge (Qg) of 4nC at 4.5V and Input Capacitance (Ciss) of 225pF at 8V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 775mA |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 8V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 570mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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