NTJD2152PT1
MOSFET 2P-CH 8V 0.775A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTJD2152PT1 is a dual P-channel MOSFET array featuring 8V drain-source voltage and a continuous drain current of 775mA at 25°C. This surface-mount component, packaged in a 6-TSSOP, SC-88, SOT-363, offers a low on-resistance of 300mOhm maximum at 570mA and 4.5V Vgs. The logic-level gate design facilitates lower drive voltages. Key parameters include a maximum power dissipation of 270mW, gate charge of 4nC at 4.5V, and input capacitance of 225pF at 8V. The device operates within an ambient temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 775mA |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 8V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 570mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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