NTJD1155LT1
MOSFET N/P-CH 8V 1.3A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTJD1155LT1 is a MOSFET array featuring both N-channel and P-channel transistors. This device operates with a Drain-Source Voltage (Vdss) of 8V and supports a continuous Drain Current (Id) of up to 1.3A at 25°C. The array boasts a low On-Resistance (Rds On) of 175mOhm maximum at 1.2A, 4.5V, and a threshold voltage (Vgs(th)) of 1V maximum at 250µA. Packaged in a compact SC-88/SC70-6/SOT-363 surface mount configuration, it dissipates a maximum power of 400mW and operates across an industrial temperature range of -55°C to 150°C. This component is commonly utilized in portable electronics, battery management systems, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 400mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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