NTHD5905T1
MOSFET 2P-CH 8V 3A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD5905T1 is a dual P-channel MOSFET array designed for demanding applications. This ChipFET™ component features a drain-source voltage (Vdss) of 8V and a continuous drain current (Id) of 3A at 25°C. With a maximum power dissipation of 1.1W and a low on-resistance (Rds On) of 90mOhm at 3A and 4.5V, it offers efficient switching. The logic level gate feature simplifies driving requirements. Key parameters include a gate charge (Qg) of 9nC at 4.5V and a threshold voltage (Vgs(th)) of 450mV at 250µA. This device is supplied in a ChipFET™ package for surface mounting and operates within an extended temperature range of -55°C to 150°C (TJ). The NTHD5905T1 is commonly found in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | ChipFET™ |
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