NTHD5904T1
MOSFET 2N-CH 20V 3.1A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD5904T1 is a dual N-channel MOSFET array designed for surface mount applications. This ChipFET™ device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.1A at 25°C. With a low on-resistance of 75mOhm at 3.1A and 4.5V Vgs, it offers efficient power handling up to 1.1W. The logic level gate design and a gate threshold voltage (Vgs(th)) of 600mV at 250µA facilitate driving with lower voltage signals. Key electrical parameters include a maximum gate charge (Qg) of 6nC at 4.5V. The NTHD5904T1 operates across a temperature range of -55°C to 150°C and is supplied in an 8-SMD, Flat Leads package on tape and reel (TR). This component is suitable for applications in automotive, industrial automation, and consumer electronics requiring compact, high-performance switching solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Supplier Device Package | ChipFET™ |
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