NTHD5903T1G
MOSFET 2P-CH 20V 2.2A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD5903T1G is a dual P-channel MOSFET array designed for high-efficiency power management applications. This ChipFET™ device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.2A at 25°C. With a maximum Rds(On) of 155mOhm at 2.2A and 4.5V Vgs, it offers low conduction losses. The logic-level gate ensures compatibility with low-voltage control signals, while a maximum gate charge of 7.4nC at 4.5V facilitates faster switching. This surface mount component, packaged in an 8-SMD, Flat Leads configuration and supplied on tape and reel, dissipates a maximum of 1.1W. Its operating temperature range is -55°C to 150°C. This MOSFET array finds application in consumer electronics, industrial automation, and portable devices.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Supplier Device Package | ChipFET™ |
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