NTHD4508NT1G
MOSFET 2N-CH 20V 3A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4508NT1G is a dual N-channel MOSFET array designed for efficient power management. Featuring a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C, this component offers a low Rds On of 75mOhm at 3.1A and 4.5V. Its logic level gate capability and 4nC gate charge at 4.5V facilitate easy integration with low-voltage control signals. The device boasts a maximum power dissipation of 1.13W and an input capacitance (Ciss) of 180pF at 10V. Packaged in a ChipFET™ format suitable for surface mounting, the NTHD4508NT1G operates across a wide temperature range of -55°C to 150°C and is supplied on tape and reel. This MOSFET array finds application in automotive, industrial, and consumer electronics requiring compact and reliable power switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.13W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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