NTHD4502NT1G
MOSFET 2N-CH 30V 2.2A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4502NT1G is a dual N-channel MOSFET array designed for surface mount applications. This ChipFET™ component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C. The device offers a maximum ON-resistance (Rds On) of 85mOhm at 2.9A and 10V, with a gate charge (Qg) of 7nC maximum at 10V. Its logic level gate functionality and 640mW power dissipation make it suitable for various applications including automotive, industrial control, and consumer electronics. The NTHD4502NT1G operates within a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 640mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 15V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | ChipFET™ |
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