NTHD4502NT1
MOSFET 2N-CH 30V 2.2A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4502NT1 is a dual N-channel MOSFET array designed for surface mount applications. This ChipFET™ device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C. The component offers a low Rds On of 85mOhm maximum at 2.9A and 10V, along with a logic-level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 7nC maximum at 10V and an input capacitance (Ciss) of 140pF maximum at 15V. With a maximum power dissipation of 640mW, it operates within a temperature range of -55°C to 150°C (TJ). The device is supplied in an 8-SMD, Flat Leads package, presented on tape and reel. This MOSFET array finds application in various power management and switching circuits across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 640mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 15V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | ChipFET™ |
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