NTHD4401PT3
MOSFET 2P-CH 20V 2.1A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4401PT3 is a 2 P-Channel MOSFET array designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.1A at 25°C. With a low Rds(On) of 155mOhm at 2.1A and 4.5V, it minimizes conduction losses. The NTHD4401PT3 incorporates a Logic Level Gate feature, enabling operation with lower gate drive voltages. Its low gate charge (Qg) of 6nC at 4.5V and input capacitance (Ciss) of 300pF at 10V contribute to fast switching speeds. Packaged in an 8-SMD, Flat Leads ChipFET™ format for efficient surface mounting, this component offers a maximum power dissipation of 1.1W. It operates reliably across a wide temperature range of -55°C to 150°C. This MOSFET array is suitable for use in portable electronics, power management, and battery-powered devices.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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