NTHD4401PT1G
MOSFET 2P-CH 20V 2.1A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4401PT1G is a dual P-channel MOSFET array designed for high-efficiency switching applications. This ChipFET™ device offers a 20V drain-source voltage (Vdss) rating and can handle a continuous drain current (Id) of up to 2.1A at 25°C. Featuring logic level gate operation, it ensures compatibility with a wide range of control signals. The MOSFET array exhibits a low on-resistance of 155mOhm at 2.1A and 4.5V Vgs, with a maximum gate charge of 6nC at 4.5V. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this surface mount component is suitable for demanding applications in the automotive and industrial sectors. The NTHD4401PT1G is supplied in Tape & Reel packaging, with the ChipFET™ package providing a compact footprint.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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