NTHD4102PT3G
MOSFET 2P-CH 20V 2.9A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD4102PT3G is a 2 P-Channel MOSFET array designed for surface mount applications. This ChipFET™ package features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.9A at 25°C. The Rds On is specified at a maximum of 80mOhm at 2.9A and 4.5V Vgs. With a logic level gate and a gate charge (Qg) of 8.6nC at 4.5V, it offers efficient switching characteristics. The component has a maximum power dissipation of 1.1W and an input capacitance (Ciss) of 750pF at 16V. Operating across a temperature range of -55°C to 150°C, this device is suitable for use in automotive and industrial applications. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
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