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NTHD3102CT1G

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NTHD3102CT1G

MOSFET N/P-CH 20V 4A CHIPFET

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi NTHD3102CT1G is a MOSFET array featuring N-channel and P-channel configurations, designed for efficient power management. This device operates with a drain-source voltage (Vdss) of 20V and supports continuous drain currents (Id) of 4A for the N-channel and 3.1A for the P-channel, as measured at 25°C. It incorporates a logic level gate feature, enabling operation with lower gate drive voltages. The NTHD3102CT1G boasts a maximum on-resistance (Rds On) of 45mOhm at 4.4A and 4.5V gate-source voltage, with a gate charge (Qg) of 7.9nC at 4.5V. Input capacitance (Ciss) is specified at 510pF maximum at 10V. This component is supplied in an 8-SMD, Flat Leads ChipFET™ package, suitable for surface mounting and rated for a maximum power dissipation of 1.1W. It is engineered for reliable operation across an extended temperature range of -55°C to 150°C (TJ). This device is utilized in applications such as battery management, power switching, and general-purpose load switching within the consumer electronics and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds510pF @ 10V
Rds On (Max) @ Id, Vgs45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs7.9nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageChipFET™

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