NTHD3100CT1
MOSFET N/P-CH 20V 2.9A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD3100CT1 is a MOSFET array featuring N and P-channel configurations. This device offers a 20V drain-to-source voltage and continuous drain current ratings of 2.9A and 3.2A for the N and P-channel respectively. Key specifications include a maximum power dissipation of 1.1W and a low Rds On of 80mOhm at 2.9A and 4.5V. The logic level gate feature and a gate charge of 2.3nC at 4.5V facilitate efficient switching. Input capacitance (Ciss) is a maximum of 165pF at 10V. This component utilizes MOSFET technology and is supplied in an 8-SMD, Flat Leads ChipFET™ package, delivered on tape and reel. The NTHD3100CT1 is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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